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Émilie-Romagne < État de New York < État de Washington  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 335.
[0-50] [0 - 20][0 - 50][50-70]
Ident.Authors (with country if any)Title
001B55 (2012) Gallium Indium Nitride-Based Green Lasers
005136 (2009) Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide
005C34 (2008) The NANIVID : A New Device for Cancer Cell Migration Studies
006815 (2008) Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems
006992 (2008) Discrimination between electronic and optical blooming in an InSb focal-plane array under high-intensity excitation
00A376 (2004-06-28) Chemistry-mediated two-dimensional to three-dimensional transition of In thin films
00A391 (2004-06-15) Templated wide band-gap nanostructures
00A408 (2004-06-07) Terahertz emission by InN
00A425 (2004-06-01) Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys
00A445 (2004-05-31) GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
00A490 (2004-05-03) Organic light-emitting devices with laminated top contacts
00A555 (2004-04-26) Nonlinear optical input-output characteristics of 1.55 μm injection-locked vertical-cavity surface-emitting lasers
00A595 (2004-04-12) Effects of electron concentration on the optical absorption edge of InN
00A662 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
00A674 (2004-03-22) Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
00A728 (2004-03-01) Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy
00A729 (2004-03-01) High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications
00A755 (2004-03) Integrated InGaAs-InP quantum wire laser-modulators for 1.55-μm applications
00A882 (2004-01-12) High-efficiency tandem organic light-emitting diodes
00A973 (2004) Ultrafast carrier dynamics in InN epilayers
00BD22 (2003-12-15) Time-resolved spectroscopy of recombination and relaxation dynamics in InN
00BE47 (2003-11-03) Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
00BE54 (2003-11-01) Measurement of extreme-ultraviolet attenuation edges of magnesium, tin, and indium filters
00BE87 (2003-10-27) Growth of cubic InN on r-plane sapphire
00BE91 (2003-10-15) Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure
00BF08 (2003-10-15) Emitter injection efficiency and base transport factor in InAs bipolar transistors
00BF22 (2003-10-06) Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer
00BF29 (2003-10-01) Temperature dependence of the fundamental band gap of InN
00BF34 (2003-10-01) InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
00BF94 (2003-09-08) High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers
00C041 (2003-08-25) Experimental study of the optical gain and loss in InAs/GaInSb interband cascade lasers
00C048 (2003-08-18) Monolithically series-interconnected GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic devices with an internal backsurface reflector formed by wafer bonding
00C085 (2003-08-15) Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
00C097 (2003-08-11) Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
00C118 (2003-08-01) Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs
00C150 (2003-07-28) 1.47-1.49-μm InGaAsP/InP diode laser arrays
00C253 (2003-06-23) Exciton and carrier motion in quaternary AlInGaN
00C309 (2003-06-01) Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
00C335 (2003-05-26) Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
00C465 (2003-04-15) Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells
00C547 (2003-03-17) Surface charge accumulation of InN films grown by molecular-beam epitaxy
00C585 (2003-03-03) Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy
00C595 (2003-03-01) Injection cascade lasers with graded gap barriers
00C616 (2003-02-24) Kinetics-limited surface structures at the nanoscale
00C640 (2003-02-15) Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure
00C647 (2003-02-10) Electron-beam-induced damage in wurtzite InN
00C704 (2003-01-25) High-Efficiency Multi-Cell TPV Module Fabrication and Performance
00C709 (2003-01-25) Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP
00C759 (2003-01-01) Nonlocality and strong coupling in the heavy fermion superconductor CeCoIn5: A penetration depth study
00D736 (2003) Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes
00DB90 (2002-12-16) Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

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